HFA3096(1998) View Datasheet(PDF) - Intersil
Part Name
Description
MFG CO.
HFA3096 Datasheet PDF : 9 Pages
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HFA3046, HFA3096, HFA3127, HFA3128
Electrical Specifications TA = 25oC (Continued)
PARAMETER
Base-to-Emitter Capacitance
Collector-to-Base Capacitance
TEST CONDITIONS
VBE = -3V
VCB = 3V
DIE
SOIC
MIN TYP MAX MIN TYP MAX UNITS
-
200
-
-
500
-
fF
-
200
-
-
500
-
fF
Electrical Specifications TA = 25oC
DIE
SOIC
PARAMETER
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX UNITS
DC PNP CHARACTERISTICS
Collector-to-Base Breakdown
Voltage, V(BR)CBO
IC = -100µA, IE = 0
10
15
-
10
15
-
V
Collector-to-Emitter Breakdown
Voltage, V(BR)CEO
IC = -100µA, IB = 0
8
15
-
8
15
-
V
Collector-to-Emitter Breakdown
IC = -100µA, Base Shorted to Emitter
10
15
-
10
15
-
V
Voltage, V(BR)CES
Emitter-to-Base Breakdown
Voltage, V(BR)EBO
IE = -10µA, IC = 0
4.5
5
-
4.5
5
-
V
Collector-Cutoff-Current, ICEO
VCE = -6V, IB = 0
-
2
100
-
2
100
nA
Collector-Cutoff-Current, ICBO
VCB = -8V, IE = 0
-
0.1
10
-
0.1
10
nA
Collector-to-Emitter Saturation
Voltage, VCE(SAT)
IC = -10mA, IB = -1mA
-
0.3
0.5
-
0.3
0.5
V
Base-to-Emitter Voltage, VBE
IC = -10mA
-
0.85 0.95
-
0.85 0.95
V
DC Forward-Current Transfer
Ratio, hFE
IC = -10mA, VCE = -2V
20
60
-
20
60
-
Early Voltage, VA
Base-to-Emitter Voltage Drift
IC = -1mA, VCE = -3.5V
IC = -10mA
10
20
-
-
-1.5
-
10
20
-
-1.5
-
V
-
mV/oC
Collector-to-Collector Leakage
-
1
-
-
1
-
pA
Electrical Specifications TA = 25oC
PARAMETER
TEST CONDITIONS
DYNAMIC PNP CHARACTERISTICS
Noise Figure
fT Current Gain-Bandwidth
Product
Power Gain-Bandwidth
Product
f = 1.0GHz, VCE = -5V,
IC = -5mA, ZS = 50Ω
IC = -1mA, VCE = -5V
IC = -10mA, VCE = -5V
IC = -10mA, VCE = -5V
Base-to-Emitter Capacitance
Collector-to-Base Capacitance
VBE = 3V
VCB = -3V
DIE
SOIC
MIN TYP MAX MIN TYP MAX UNITS
-
3.5
-
-
2
-
-
5.5
-
-
3
-
-
200
-
-
300
-
-
3.5
-
dB
-
2
-
GHz
-
5.5
-
GHz
-
2
-
GHz
-
500
-
fF
-
600
-
fF
3-449
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