BSV52LT1(2001) View Datasheet(PDF) - ON Semiconductor

Part Name

Description

MFG CO.

BSV52LT1
(Rev.:2001)

Switching Transistor

ON Semiconductor 

BSV52LT1

ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

ON CHARACTERISTICS

DC Current Gain

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

Collector–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 300 µAdc)

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

Base–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

SMALL–SIGNAL CHARACTERISTICS

HFE

25

40

25

VCE(sat)

—

—

—

VBE(sat)

700

—

Current–Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)

fT

400

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Cobo

—

Input Capacitance

(VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz)

Cibo

—

SWITCHING CHARACTERISTICS

Storage Time

(IC = IB1 = IB2 = 10 mAdc)

ts

—

Turn–On Time

(VBE = 1.5 Vdc, IC = 10 mAdc, IB = 3.0 mAdc)

ton

—

Turn–Off Time

(IC = 10 mAdc, IB = 3.0 mAdc)

toff

—

Max

Unit

—

120

—

300

250

400

850

1200

—

mVdc

mVdc

MHz

—

pF

4.0

pF

4.5

ns

13

ns

12

ns

18

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