DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
VGS = 4.0 V
60
40
10 V
20
ID = 13 A
0
Pulsed
−50
0
50 100 150
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
1000
Ciss
Coss
100
Crss
10
0.1
1
10
100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1.0
10
100
IF - Drain Current - A
2SK3053
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000 Pulsed
100
VGS = 10 V
10
VGS = 0 V
1
0.10
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
1000
SWITCHING CHARACTERISTICS
tr
100
10
td(off)
tf
td(on)
1
0.1
1
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
16
60
VDD = 48 V
12
30 V
12 V
VGS
40
8
20
4
VDS
ID = 25 A
0
0 4 8 12 16 20 24 28 32
QG - Gate Charge - nC
Data Sheet D12912EJ3V0DS
5