WED9LC6416V1612BC View Datasheet(PDF) - White Electronic Designs => Micro Semi

Part Name

Description

MFG CO.

WED9LC6416V1612BC

128Kx32 SSRAM/4Mx32 SDRAM

White Electronic Designs => Micro Semi 

WED9LC6416V

FIG. 10 SDRAM PAGE WRITE CYCLE AT DIFFERENT BANK @ BURST LENGTH = 4

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15 16 17 18 19

SDCLK

SDCE

SDRAS

SDCAS

ADDR

RAa

CAa RBb

CBb

CAc

CBd

Note 2

BA

SDA10

RAa

DQ

SDWE

BWE

Row Active

(A-Bank)

RBb

tCDL

tRDL

DAa0 DAa1 DAa2 DAa3 DBb0 DBb1 DBb2 DBb3 DAc0 DAc1 DBd0 DBd1

Row Active

(B-Bank)

Write

(A-Bank)

Write

(B-Bank)

Note 1

Write

(A-Bank)

Write

Precharge

(B-Bank) (Both Banks)

DON’T CARE

NOTES:

1. To interrupt burst write by Row precharge, BWE should be asserted to mask invalid input data.

2. To interrupt a burst read by Row precharge, both the read and the precharge banks must be the same.

January 20001

19

White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com

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