TYPICAL ELECTRICAL CHARACTERISTICS
MMFT3055VL
4
6V
3.5
4.5 V
3.5 V
3
TJ = 25°C
3V
2.5
2
1.5
2.5 V
1
0.5
2V
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
4
VDS ≥ 10 V
3.5
3
2.5
2
1.5
1
25°C
0.5
TJ = – 55°C
100°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.25
0.225
VGS = 5 V
0.2
0.175
0.15
0.125
0.1
0.075
TJ = 100°C
25°C
– 55°C
0.05
0.025
0
0 0.5
1 1.5 2 2.5 3
ID, DRAIN CURRENT (AMPS)
3.5 4
Figure 3. On–Resistance versus Drain Current
and Temperature
0.25
0.225 TJ = 25°C
0.2
0.175
0.15
0.125
VGS = 10 V
0.1
15 V
0.075
0.05
0.025
0
0 0.5 1 1.5 2 2.5 3 3.5 4
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.0
1.8
VGS = 5 V
ID = 0.75 A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
– 50 – 25
0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
150 175
Figure 5. On–Resistance Variation with
Temperature
1000
VGS = 0 V
100
10
TJ = 125°C
100°C
1
0
10
20
30
40
50
60
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3