BF1108 View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
BF1108 Datasheet PDF : 12 Pages
| |||
Philips Semiconductors
Silicon RF switches
Product specification
BF1108; BF1108R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
FET
VDS
drain-source voltage
VSD
source-drain voltage
VDG
drain-gate voltage
VSG
source-gate voltage
ID
drain current
Diode
VR
continuous reverse voltage
IF
continuous forward current
FET and diode
Tstg
storage temperature
Tj
junction temperature
MIN. MAX. UNIT
−
3
V
−
3
V
−
7
V
−
7
V
−
10
mA
−
35
V
−
100
mA
−65
+150 °C
−
150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point note 1
Note
1. Soldering point of FET gate and diode anode lead.
VALUE
250
UNIT
K/W
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
FET
V(BR)GSS
VGSoff
IDSX
IGSS
RDSon
Diode
gate-source breakdown voltage
gate-source pinch-off voltage
drain-source leakage current
gate cut-off current
drain-source on-state resistance
VF
forward voltage
IR
reverse current
CONDITIONS
MIN. TYP. MAX. UNIT
VDS = 0; IGS = 0.1 mA 7
VDS = 1 V; ID = 20 µA −
VGS = −5 V; VDS = 2 V −
VGS = −5 V; VDS = 0
−
VGS = 0; ID = 1 mA
−
IF = 10 mA
−
VR = 25 V
−
VR = 20 V; Tamb = 75 °C −
−
−
V
−3 −4 V
−
10 µA
−
100 nA
12 20 Ω
−
1
V
−
50 nA
−
1
µA
1999 Nov 18
3
Share Link: 