NTE363 View Datasheet(PDF) - NTE Electronics
Part Name
Description
MFG CO.
NTE363 Datasheet PDF : 2 Pages
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NTE363
Silicon NPN Transistor
RF Power Amp, PO = 4W
Description:
The NTE363 is a 12.5V epitaxial silicon NPN planer transistor designed primarily for UHF commu-
nications.
Features:
D Designed for UHF Military and Commercial Equipment
D 4W (Min) with Greater than 8dB Gain
D Withstands Infinite VSWR Under Operating Conditions
D Low Inductance Stripline Package
D Emitter Stabilized
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Total Device Dissipation (TC = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.6°C/W
Electrical Characteristics:
Parameter
Collector–Emiter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Symbol
Test Conditions
V(BR)CEO IC = 100mA, IB = 0, Note 1
V(BR)CES IC = 100mA, IBE = 0, Note 1
V(BR)EBO IE = 2mA, IC = 0
ICBO VCB = 5V, IE = 0
hFE VCE = 5V, IC = 200mA
Note 1. Pulsed throught 25MH inductor.
Min Typ Max Unit
16 –
–
V
36 –
–
V
4
–
–
V
–
– 1.0 mA
20 –
–
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