NTE2410 View Datasheet(PDF) - NTE Electronics

Part Name

Description

MFG CO.

NTE2410

Silicon NPN Transistor High Voltage Amp/Driver (Comp to NTE2411)

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Note 3)

DC Current Gain

hFE IC = 1mA, VCE = 5V

IC = 10mA, VCE = 5V

IC = 50mA, VCE = 5V

80 –

–

80 – 250

30 –

–

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

VCE(sat)

VBE(sat)

IC = 10mA, IB = 1mA

IC = 50mA, IB = 5mA

IC = 10mA, IB = 1mA

IC = 50mA, IB = 5mA

–

– 0.15 V

–

– 0.20 V

–

– 1.0 V

–

– 1.0 V

Note 3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.

.016 (0.48)

C

.098

(2.5)

B

E

Max

.074 (1.9)

.118 (3.0) Max

.037 (0.95)

.043 (1.1)

.051

(1.3)

.007 (0.2)

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