NTE278 View Datasheet(PDF) - NTE Electronics
Part Name
Description
MFG CO.
NTE278 Datasheet PDF : 2 Pages
| |||
NTE278
Silicon NPN Transistor
Broadband RF Amp
Description:
The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband
applications requiring good linearity. Usable as a high frequency current mode switch to 200mA.
Features:
D Low Noise Figure: NF = 3.0dB Typ @ f = 200MHz
D High Current–Gain Bandwidth Product: fT = 1200MHz Min @ IC = 50mA
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Total Device Dissipation (TC = +75°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Note 1. Total Device Dissipation at TA = +25°C is 1 Watt.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 5mA, IB = 0
20
VCER(sus) IC = 5mA, RBE = 10Ω, Note 2
40
Collector Cutoff Current
ICEO VCE = 15V, IB = 0
–
ICEX VCE = 15V, VBE = –1.5V, TC = +150°C –
VCE = 35V, VBE = –1.5V
–
Emitter Cutoff Current
IEBO VBE = 3V, IC = 0
–
–
–
V
–
–
V
– 20 µA
–
5 mA
–
5 mA
– 100 µA
Note 2. Pulsed through a 25mH inductor; 50% Duty Cycle.
Share Link: 