NTE2567 View Datasheet(PDF) - NTE Electronics

Part Name

Description

MFG CO.

NTE2567

Silicon Complementary Transistors High Current, High Speed Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Turn–On Time

NTE2566

NTE2567

Storage Time

NTE2566

NTE2567

ton IC = 5A, IB1 = 20A,

IB2 = –20A, VCC = 20V,

Pulse Width = 20µs,

Duty Cycle ≤ 1%

tstg

µs

– 0.1 –

– 0.2 – µs

µs

– 1.2 –

– 0.4 – µs

Collector Current Fall Time

NTE2566

tf

NTE2567

µs

– 0.05 –

– 0.1 – µs

.402 (10.2) Max

.224 (5.7) Max

.295

(7.5)

.669

(17.0)

Max

BCE

.122 (3.1)

Dia

.165

(4.2)

.531

(13.5)

Min

.173 (4.4) Max

.114 (2.9) Max

.100 (2.54)

.059 (1.5) Max

NOTE: Tab is isolated

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