WMBT5401LT1 View Datasheet(PDF) - Wing Shing International Group

Part Name

Description

MFG CO.

WMBT5401LT1

PNP Silicon Transistor

Wing Shing International Group 

WMBT5401LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC = –1.0 mAdc, VCE = –5.0 Vdc)

(IC = –10 mAdc, VCE = –5.0 Vdc)

(IC = –50 mAdc, VCE = –5.0 Vdc)

Collector – Emitter Saturation Voltage

(IC = –10 mAdc, IB = –1.0 mAdc)

(IC = –50 mAdc, IB = –5.0 mAdc)

hFE

80

80

80

VCE(sat)

—

—

—

—

240

—

Vdc

–0.2

–0.5

Base – Emitter Saturation Voltage

(IC = –10 mAdc, IB = –1.0 mAdc)

(IC = –50 mAdc, IB = –5.0 mAdc)

SMALL– SIGNAL CHARACTERISTICS

VBE(sat)

—

—

Vdc

–1.0

–1.0

Current – Gain — Bandwidth Product

(IC = –10 mAdc, VCE = –10 Vdc, f = 100 MHz)

fT

MHz

100

300

Output Capacitance

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

pF

—

6.0

Small Signal Current Gain

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

hfe

—

40

200

Noise Figure

(IC = –200 µAdc, VCE = –5.0 Vdc, RS = 10 Ω, f = 1.0 kHz)

NF

dB

—

8.0

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