MPSA77P View Datasheet(PDF) - Zetex => Diodes

Part Name

Description

MFG CO.

MPSA77P

PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

Zetex => Diodes 

PNP SILICON PLANAR MEDIUM

POWER DARLINGTON TRANSISTOR

ISSUE 1 – JUNE 94

FEATURES

* 60 Volt VCEO

* Gain of 10k at IC=100mA

MPSA77P

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at Tamb=25°C

Operating and Storage Temperature Range

SYMBOL

VCBO

VCEO

VEBO

IC

Ptot

Tj:Tstg

E-Line

TO92 Compatible

VALUE

-60

-60

-10

-500

625

-55 to +200

UNIT

V

V

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO -60

V

IC=-100µA, IE=0

Collector-Emitter

Breakdown Voltage

V(BR)CEO -60

V

IC=-100µA, IB=0*

Emitter-Base

Breakdown Voltage

V(BR)EBO -10

V

IE=-10µA, IC=0

Collector Cut-Off

ICBO

Current

-100 nA

VCB=-50V, IE=0

Collector Cut-Off

ICES

Current

-500 nA

VCE=-50V

Emitter Cut-Off

IEBO

Current

-100 nA

VEB=-10V, IC=0

Collector-Emitter

On Voltage

VCE(sat)

-1.5 V

Base-Emitter

Saturation Voltage

VBE(on)

-2

V

Static Forward Current hFE

10k

Transfer Ratio

10k

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

IC=-100mA, IB=-0.1mA*

IC=-100mA, VCE=-5V*

IC=-10mA, VCE=-5V*

IC=-100mA, VCE=5V*

3-83

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