PUMT1 View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
PUMT1 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose double transistor
Preliminary specification
PUMT1
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Per device
Rth j-a
thermal resistance from junction to ambient
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
416
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per transistor
ICBO
collector cut-off current
IEBO
hFE
VCEsat
Cc
fT
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
collector capacitance
transition frequency
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
MIN. MAX. UNIT
IE = 0; VCB = −30 V
−
IE = 0; VCB = −30 V; Tj = 150 °C
−
IC = 0; VEB = −4 V
−
IC = −1 mA; VCE = −6 V
120
IC = −50 mA; IB = −5 mA; note 1
−
IE = ie = 0; VCB = −12 V; f = 1 MHz
−
IC = −2 mA; VCE = −12 V; f = 100 MHz 100
−100 nA
−10
µA
−100 nA
−
−200 mV
2.2
pF
−
MHz
1999 Apr 14
3
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