FSB6726 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
MFG CO.
FSB6726 Datasheet PDF : 3 Pages
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FSB6726
C
E
B
SuperSOTTM-3
PNP General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents
to 1.0 A. Sourced from Process 77.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
FSB660/FSB660A
VCEO
Collector-Emitter Voltage
30
VCBO
Collector-Base Voltage
40
VEBO
Emitter-Base Voltage
5
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.5
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
V
V
V
A
°C
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
RθJA
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Max
FSB6726
500
250
Units
mW
°C/W
© 1999 Fairchild Semiconductor Corporation
Page 1 of 2
fsb6726lwp Pr77 RevA
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