PMBFJ177 View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
PMBFJ177 Datasheet PDF : 6 Pages
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Philips Semiconductors
P-channel silicon field-effect transistors
Product specification
PMBFJ174 to 177
DESCRIPTION
Silicon symmetrical p-channel
junction FETs in plastic
microminiature SOT23
envelopes.They are intended for
application with analogue switches,
choppers, commutators etc. using
SMD technology. A special feature is
the interchangeability of the drain and
source connections.
PINNING
1 = drain
2 = source
3 = gate
Note
1. Drain and source are
interchangeable.
Marking codes:
174 : p6X
175 : p6W
176 : p6S
177 : p6Y
QUICK REFERENCE DATA
Drain-source voltage
Gate-source voltage
Gate current
Total power dissipation
up to Tamb = 25 °C
Drain current
−VDS = 15 V; VGS = 0
Drain-source ON-resistance
−VDS = 0,1 V; VGS = 0
handbook, halfpage
3
1
2
Top view
d
g
s
MAM386
Fig.1 Simplified outline and symbol, SOT23.
± VDS
VGSO
−IG
max.
max.
max.
30
V
30
V
50
mA
Ptot
−IDSS
max.
PMBFJ174
>
20
<
135
300
175 176
7
2
70
35
mW
177
1,5 mA
20 mA
RDS on
<
85 125 250 300 Ω
April 1995
2
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