BULD50KC, BULD50SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
FEBRUARY 1994 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
30
LDX50SHF
TC = 25°C
ANTI-PARALLEL DIODE
INSTANTANEOUS FORWARD CURRENT
vs
INSTANTANEOUS FORWARD VOLTAGE
LDX50SVF
10
TC = 25°C
10
1·0
VCE = 1 V
VCE = 5 V
VCE = 10 V
1·0
0·01
0·1
1·0
IC - Collector Current - A
Figure 1.
0·1
0·01
10
0
0·5
1·0
1·5
2·0
2·5
3·0
VEC - Instantaneous Forward Voltage - V
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
CASE TEMPERATURE
1.0
LDX50SVB
IC = 750 mA
IB = 150 mA
0.9
0.8
0.7
0.6
0
25
50
75
100
TC - Case Temperature - °C
Figure 3.
PRODUCT INFORMATION
3