BULD50 View Datasheet(PDF) - Power Innovations

Part Name

Description

MFG CO.

BULD50

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

Power Innovations 

BULD50KC, BULD50SL

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

FEBRUARY 1994 - REVISED SEPTEMBER 1997

absolute maximum ratings at 25°C ¦ (unless otherwise noted) (continued)

RATING

Continuous device dissipation

Maximum average continuous diode forward current

Operating junction temperature range

Storage temperature range

BULD50KC

BULD50SL

SYMBOL

Ptot

IE(av)

Tj

Tstg

VALUE

50

see Figure 11

0.5

-65 to +150

-65 to +150

UNIT

W

A

°C

°C

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

VCEO(sus)

ICES

IEBO

VBE(sat)

VCE(sat)

Collector-emitter

sustaining voltage

Collector-emitter

cut-off current

Emitter cut-off

current

Base-emitter

saturation voltage

Collector-emitter

saturation voltage

Forward current

hFE

transfer ratio

Anti-parallel diode

VEC

forward voltage

Anti-parallel diode

trr

reverse recovery time

IC = 100 mA

VCE = 600 V

VEB = 9 V

IB = 150 mA

IB = 150 mA

IB = 300 mA

VCE = 10 V

VCE = 1 V

VCE = 5 V

IE = 1 A

L = 25 mH

VBE = 0

IC = 0

IC = 750 mA

IC = 750 mA

IC = 1.5 A

IC = 10 mA

IC = 750 mA

IC = 1.5 A

400

V

10

µA

1

mA

(see Notes 3 and 4)

0.9 1.1

V

(see Notes 3 and 4)

0.2 0.5

V

0.4

1

10

17

(see Notes 3 and 4) 10

15

20

10

15

20

(see Notes 3 and 4)

1.25 1.5

V

(see Note 5)

1

µs

NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located

within 3.2 mm from the device body.

5. Tested in a typical High Frequency Electronic Ballast.

thermal characteristics

RθJA

RθJC

PARAMETER

Junction to free air thermal resistance

Junction to case thermal resistance

BULD50KC

BULD50SL

BULD50KC

MIN TYP MAX UNIT

62.5

115

2.5

°C/W

°C/W

inductive-load switching characteristics at 25°C case temperature

PARAMETER

tsv

Storage time

IC = 750 mA

L = 1 mH

TEST CONDITIONS

IB(on) = 150 mA

IB(off) = 150 mA

VCC = 40 V

VCLAMP = 300 V

MIN TYP MAX UNIT

3.35 4.5

µs

resistive-load switching characteristics at 25°C case temperature

PARAMETER

tfi

Current fall time

IC = 750 mA

VCC = 300 V

TEST CONDITIONS

IB(on) = 150 mA

IB(off) = 150 mA

MIN TYP MAX UNIT

150 250

ns

PRODUCT INFORMATION

2

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