BC547 View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
BC547 Datasheet PDF : 9 Pages
| |||
Philips Semiconductors
NPN general purpose transistors
Product specification
BC546; BC547
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
IEBO
hFE
VCEsat
VBEsat
emitter-base cut-off current
DC current gain
BC546A
BC546B; BC547B
BC547C
DC current gain
BC546A
BC546B; BC547B
BC547C
BC547
collector-emitter saturation
voltage
base-emitter saturation voltage
VBE
base-emitter voltage
Cc
collector capacitance
Ce
emitter capacitance
fT
transition frequency
F
noise figure
CONDITIONS
MIN.
VCB = 30 V; IE = 0 A
−
VCB = 30 V; IE = 0 A; Tj = 150 °C −
VEB = 5 V; IC = 0 A
−
VCE = 5 V; IC = 10 µA;
see Figs 2, 3 and 4
−
−
−
VCE = 5 V; IC = 2 mA;
see Figs 2, 3 and 4
110
200
420
110
IC = 10 mA; IB = 0.5 mA
−
IC = 100 mA; IB = 5 mA
−
IC = 10 mA; IB = 0.5 mA; note 1 −
IC = 100 mA; IB = 5 mA; note 1
−
VCE = 5 V; IC = 2 mA; note 2
580
VCE = 5 V; IC = 10 mA
−
VCB = 10 V; IE = ie = 0 A; f = 1 MHz −
VEB = 0.5 V; IC = ic = 0 A;
−
f = 1 MHz
VCE = 5 V; IC = 10mA; f = 100 MHz 100
VCE = 5 V; IC = 200 µA; RS = 2 kΩ; −
f = 1 kHz; B = 200 Hz
TYP.
−
−
−
90
150
270
180
290
520
−
90
200
700
900
660
−
1.5
11
−
2
MAX. UNIT
15
nA
5
µA
100 nA
−
−
−
220
450
800
800
250 mV
600 mV
−
mV
−
mV
700 mV
770 mV
−
pF
−
pF
−
MHz
10
dB
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
2004 Nov 25
4
Share Link: 