P/N + Description + Content Search
Part Name(s) : H12N65 H12N65E H12N65F
Hi-Sincerity Mocroelectronics
Description : N-Channel Power MOSFET (650V,12A)
Part Name(s) : IRS2111STRPBF IRS2111SPBF IRS2111PBF
International Rectifier
Description : HALF-BRIDGE DRIVER
Part Name(s) : H12N60 H12N60F
Hi-Sincerity Mocroelectronics
Description : N-Channel Power MOSFET (600V,12A)
Part Name(s) : IXZR16N60 IXZR16N60A IXZR16N60B
IXYS CORPORATION
Description : NChannel Enhancement Mode RF MOSFET
Part Name(s) : STS4DNFS30L 4DFS30L
STMicroelectronics
Description : N-channel 30 V, 0.044 Ω, 4 A SO-8 STripFET™ MOSFET plus SCHOTTKY rectifier (Rev - 2011)
Part Name(s) : MG600Q2YS60A
Toshiba
Description : TOSHIBA IGBT MODULE Silicon N CHANNEL IGBT
Part Name(s) : FX853
SANYO -> Panasonic
Description : MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode
Part Name(s) : MG300J2YS40
Toshiba
Description : Silicon N CHANNEL IGBT
Part Name(s) : MG25Q2YS40
Toshiba
Description : GTR MODULE Silicon N CHANNEL IGBT
Part Name(s) : MG25Q6ES42
Toshiba
Description : GTR MODULE Silicon N CHANNEL IGBT
Part Name(s) : MG300Q1US51
Toshiba
Description : TOSHIBA GTR MODULE Silicon N CHANNEL IGBT
Part Name(s) : MG600J1US51 MG600
Toshiba
Description : TOSHIBA GTR MODULE Silicon N CHANNEL IGBT
Part Name(s) : MG300J1US51
Toshiba
Description : TOSHIBA GTR MODULE Silicon N CHANNEL IGBT
Part Name(s) : MG100Q2YS11
Toshiba
Description : GTR Module Silicon N-Channel IGBT
Part Name(s) : MG75Q2YS52
Toshiba
Description : TOSHIBA GTR MODULE Silicon N CHANNEL IGBT
Part Name(s) : MG25J1BS11
Toshiba
Description : GTR MODULE Silicon N - CHANNEL IGBT
Part Name(s) : MG300Q1US11
Toshiba
Description : INSULATED GATE BIPOLAR TRANSISTOR
Part Name(s) : MG15J6ES40
Toshiba
Description : INSULATED GATE BIPOLAR TRANSISTOR
Part Name(s) : TC2320TG TC2320
Supertex Inc
Description : N- and P- Channel Enhancement-Mode Dual MOSFET