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DESCRIPTION
NPN transistor in a plastic SOT416 (SC-75) package.

FEATURES
• Low current consumption
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability
• SOT416 (SC-75) package.

APPLICATIONS
    Low power amplifiers, oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones and pagers) up to 2 GHz.

DESCRIPTION

NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems. The transistors are mounted in a

plastic SOT223 envelope.

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability.

General description
The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package.
   
Features and benefits
■ High power gain
■ Low noise figure
■ High transition frequency
■ Gold metallization ensures excellent reliability.
   
Applications
■ RF front end wideband applications in the GHz range
    ◆ Analog and digital cellular telephones
    ◆ Cordless telephones (CT1, CT2, DECT, etc.)
    ◆ Radar detectors
    ◆ Satellite TV tuners (SATV)
    ◆ MATV/CATV amplifiers
    ◆ Repeater amplifiers in fiber-optic systems.
   

DESCRIPTION
NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range,
such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems.

FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.

DESCRIPTION

NPN transistor in a plastic SOT416 (SC75) envelope.

It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz.

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures excellent reliability

• SOT416 (SC75) envelope.

General description
The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package.

Features and benefits
■ High power gain
■ Low noise figure
■ High transition frequency
■ Gold metallization ensures excellent reliability.

Applications
■ RF front end wideband applications in the GHz range
 ♦ Analog and digital cellular telephones
 ♦ Cordless telephones (CT1, CT2, DECT, etc.)
 ♦ Radar detectors
 ♦ Pagers and satellite TV tuners (SATV)
 ♦ Repeater amplifiers in fiber-optic systems.

DESCRIPTION

NPN transistor in a plastic SOT323 envelope.

It is intended for wideband applications such as satellite TV tuners, cellular phones, cordless phones, pagers etc., with signal frequencies up to 2 GHz.

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures excellent reliability

• SOT323 envelope.

DESCRIPTION
NPN transistor in a plastic SOT323 envelope.
It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz.

FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability
• SOT323 envelope.

DESCRIPTION
The BFR540 is an NPN silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.
   
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
   

DESCRIPTION
NPN transistor in a plastic SOT323 envelope.
It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz.

FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability
• SOT323 envelope.