P/N + Description + Content Search
Part Name(s) : IXZR16N60 IXZR16N60A IXZR16N60B
IXYS CORPORATION
Description : NChannel Enhancement Mode RF MOSFET
Part Name(s) : H12N65 H12N65E H12N65F
Hi-Sincerity Mocroelectronics
Description : N-Channel Power MOSFET (650V,12A)
Part Name(s) : STS4DNFS30L 4DFS30L
STMicroelectronics
Description : N-channel 30 V, 0.044 Ω, 4 A SO-8 STripFET™ MOSFET plus SCHOTTKY rectifier (Rev - 2011)
Part Name(s) : FX853
SANYO -> Panasonic
Description : MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode
Part Name(s) : H12N60 H12N60F
Hi-Sincerity Mocroelectronics
Description : N-Channel Power MOSFET (600V,12A)
Part Name(s) : EMH2801
SANYO -> Panasonic
Description : General-Purpose Switching Device Applications
Part Name(s) : EMH2801 EMH2801-TL-H
ON Semiconductor
Description : P-Channel Power MOSFET
Part Name(s) : 4N90C 4N90CL-TF3-T 4N90CG-TF3-T
Unisonic Technologies
Description : 4A, 900V N-CHANNEL POWER MOSFET
Part Name(s) : KF2N60D KF2N60DI KF2N60I KF2N60D/I
KEC
Description : N CHANNEL MOS FIELD EFFECT TRANSISTOR
Part Name(s) : 4N90C 4N90CL-TF3-T 4N90CG-TF3-T
Unisonic Technologies
Description : 4.0A, 900V N-CHANNEL POWER MOSFET (Rev - 2016)
Part Name(s) : KHB2D0N60F KHB2D0N60F2 KHB2D0N60P
KEC
Description : N CHANNEL MOS FIELD EFFECT TRANSISTOR
Part Name(s) : YJL2301G
Yangzhou yangjie electronic co., Ltd
Description : P-Channel Enhancement Mode Field Effect Transistor
KEC
Description : N CHANNEL MOS FIELD EFFECT TRANSISTOR
Part Name(s) : MDD3N40 MDD3N40RH
MagnaChip Semiconductor
Description : N-Channel MOSFET 400V, 2.0A, 3.4Ω
Part Name(s) : IRS2111STRPBF IRS2111SPBF IRS2111PBF
International Rectifier
Description : HALF-BRIDGE DRIVER
Part Name(s) : YJL02N10A
Yangzhou yangjie electronic co., Ltd
Description : N-Channel Enhancement Mode Field Effect Transistor