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Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the STMicroelectronics’ strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high-efficiency converters.

Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

Application
■ Switching applications

Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

Application
■ Switching applications

NPN EPITAXIAL PLANAR SILICON DARLINGTON TRANSISTOR

Low Freq. Power Amp.
Built in Damper Diode Complementry CSB1342

TO-220FP (3 leads) Thru-hole Fully Isolated Plastic Package

Package Outline, Tube Packing, Packaging and Handling Information

Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features   
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
   
Application
■ Switching applications
   

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in Power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.

Features

• Robust High Voltage Termination

• Avalanc he Energy Specified

• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSS and VDS(on) Specified at Elevated Temperature

Description
These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmesh™ technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics.

■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

Application
   Switching applications

FEATURES

High DC Current Gain

Low Saturation Voltage

High Power Dissipation

General Description

These N-channel enhancement mode Power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode Power supplies and electronic lamp ballasts based on half bridge.

Features

• 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V

• Low gate charge ( typical 25 nC)

• Low Crss ( typical 20 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description
This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most
demanding high efficiency converters.

■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

Application
   Switching applications