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Low Noise Amplifier 0.5 GHz - 4 GHz

This Low Noise Amplifier offers Low Noise figure performance of 3 dB over the band 0.5 GHz to 4 GHz with 35 dB Gain.

Teledyne Microwave Amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC technology. The GaAs FET’s used in these Amplifiers are well established proven devices from multiple sources.
Teledyne Microwave offers a complete line of Narrow and broadband Amplifiers covering the frequency range 500 MHz to 40 GHz. These products are available in either connectorized packages or as modules. For a complete list of these products and more, please visit our website.
Other products from Teledyne Microwave include: Transceivers, Synthesizers, and YIG Products

Low Noise Amplifier 0.5 GHz - 4 GHz

This Low Noise Amplifier offers Low Noise figure performance of 3 dB over the band 0.5 GHz to 4 GHz with 26 dB Gain.

Teledyne Microwave Amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC technology. The GaAs FET’s used in these Amplifiers are well established proven devices from multiple sources.
Teledyne Microwave offers a complete line of Narrow and broadband Amplifiers covering the frequency range 500 MHz to 40 GHz. These products are available in either connectorized packages or as modules. For a complete list of these products and more, please visit our website.
Other products from Teledyne Microwave include: Transceivers, Synthesizers, and YIG Products

Amplifier 0.5 GHz - 4 GHz

This Amplifier offers exceptional performance over the band 0.5 GHz to 4 GHz with 18 dBm P1dB output power and 26 dB Gain.

Teledyne Microwave Amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC technology. The GaAs FET’s used in these Amplifiers are well established proven devices from multiple sources.

Teledyne Microwave offers a complete line of Narrow and broadband Amplifiers covering the frequency range 500 MHz to 40 GHz. These products are available in either connectorized packages or as modules. For a complete list of these products and more, please visit our website.
Other products from Teledyne Microwave include: Transceivers, Synthesizers, and YIG Products

Amplifier 0.5 GHz - 4 GHz

This Amplifier offers exceptional performance over the band 0.5 GHz to 4 GHz with 18 dBm P1dB output power and 35 dB Gain.

Teledyne  Microwave  Amplifiers  are  balanced  or  feedback designs  and  manufactured  with  the  latest  MIC  &  MMIC technology. The GaAs FET’s used in these Amplifiers are well established proven devices from multiple sources.

Amplifier 0.5 GHz - 4 GHz

This Amplifier offers exceptional performance over the band 0.5 GHz to 4 GHz with 18 dBm P1dB output power and 17 dB Gain.
Teledyne Microwave Amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC technology. The GaAs FET’s used in these Amplifiers are well established proven devices from multiple sources.
Teledyne Microwave offers a complete line of Narrow and broadband Amplifiers covering the frequency range 500 MHz to 40 GHz. These products are available in either connectorized packages or as modules. For a complete list of these products and more, please visit our website.

Other products from Teledyne Microwave include: Transceivers, Synthesizers, and YIG Products

Description
The ATF-10100 is a high performance gallium arsenide Schottky barrier-gate field effect transistor chip. Its premium Noise figure makes this device appropriate for use in the first stage of Low Noise Amplifiers operating in the 0.5-12␣ GHz frequency range.

Features
• Low Noise Figure: 0.5 dB Typical at 4 GHz
• Low Bias: VDS= 2 V, IDS = 25 mA
• High Associated Gain: 14.0 dB Typical at 4 GHz
• High Output Power: 21.0 dBm Typical P1 dB at 4 GHz

Description

Hewlett-Packard’s ATF-36077 is an ultra-low-Noise Pseudomorphic High Electron Mobility Transistor (PHEMT), packaged in a Low parasitic, surface-mountable ceramic package. Properly matched, this  transistor will provide typical 12 GHz Noise figures of 0.5 dB, or typical 4 GHz Noise figures of 0.3 dB. Addition ally, the ATF-36077 has very Low Noise resistance, reducing the sensitivity of Noise performance

to variations in input impedance match, making the design of broadband Low Noise Amplifiers much easier.

Features

• PHEMT Technology

• Ultra-Low Noise Figure:

  0.5 dB Typical at 12 GHz

  0.3 dB Typical at 4 GHz

• High Associated Gain:

  12 dB Typical at 12 GHz

  17 dB Typical at 4 GHz

• Low Parasitic Ceramic Microstrip Package

• Tape-and-Reel Packing Option Available

Applications

• 12 GHz DBS LNB (Low Noise Block)

• 4 GHz TVRO LNB (Low Noise Block)

• Ultra-Sensitive Low Noise Amplifiers

 

Description
The INA-02100 is a Low-Noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback Amplifier chip. It is designed for narrow or wide bandwidth industrial and military applications that require high gain and Low Noise IF or RF amplification.

Features
• Cascadable 50 Ω Gain Block
• Low Noise Figure: 2.0 dB Typical at 0.5 GHz
• High Gain: 31.5 dB Typical at 0.5 GHz 25.0 dB Typical at 1.5 GHz
• 3 dB Bandwidth: DC to 1.0 GHz
• Unconditionally Stable (k>1)

Description
The ATF-21170 is a high performance gallium arsenide Schottky barrier-gate field effect transistor housed in a hermetic, high reliability package. This device is designed for use in Low Noise or medium power Amplifier applications in the 0.5-6 GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 750 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.

Features
• Low Noise Figure: 0.9 dB Typical at 4 GHz
• High Associated Gain: 13.0 dB Typical at 4 GHz
• High Output Power: 23.0 dBm Typical P 1 dB at 4 GHz
• Hermetic Gold-Ceramic Microstrip Package

Description

The ATF-10136 is a high performance gallium arsenide Schottky-barrier gate field effect transistor housed in a cost effective microstrip package. Its premium Noise figure makes this device appropriate for use in the first stage of Low Noise Amplifiers operat ing in the 0.5-12 GHz frequency range.

Features

• Low Noise Figure: 0.5 dB Typical at 4 GHz

• Low Bias:  VDS= 2 V, IDS␣ =␣ 20 mA

• High Associated Gain:  13.0 dB Typical at 4 GHz

• High Output Power:   20.0 dBm Typical P1 dB at 4 GHz

• Cost Effective Ceramic Microstrip Package

• Tape-and Reel Packaging Option Available[1]