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Description : SURMOUNT™ Low and Medium & High BARRIER Silicon SCHOTTKY DIODEs: Anti-Parallel Pair

Description and Applications
The MA4E2508 SurMountä Anti-Parallel DIODE Series are Silicon Low, Medium & High BARRIER SCHOTTKY Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form DIODEs or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device.
The Surmount SCHOTTKY devices are excellent
choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. The SurMount structure employs very low resistance silicon vias to connect the SCHOTTKY contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead SCHOTTKY DIODEs.
The multi-layer metalization employed in the fabrication of the Surmount SCHOTTKY junctions includes a platinum diffusion BARRIER, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300°C.
The “ 0502 ” outline allows for Surface Mount placement and multi- functional polarity orientations.
The MA4E2508 Family of SurMount SCHOTTKY DIODEs are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead DIODEs with the corresponding Surmount DIODE, which can be connected to a hard or soft substrate circuit with solder.

Features
● Extremely Low Parasitic Capitance and Inductance
● Surface Mountable in Microwave Circuits, No Wirebonds Required
● Rugged HMIC Construction with Polyimide Scratch Protection
● Reliable, Multilayer Metalization with a Diffusion
BARRIER, 100% Stabilization Bake (300°C, 16 hours)
● Lower Susceptibility to ESD Damage

Part Name(s) : KTX512T
KEC
KEC
Description : EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE

DC/DC CONVERTER APPLICATIONS.

FEATURES
• Composite TYPE with a PNP TRANSISTOR and a SCHOTTKY BARRIER DIODE
   contained in one package facilitating high-density mounting.
• The KTX512T is formed with two chips, one being equivalent to
   the KTA1535T and the other the KDR411S, encapsulated in one packages.
• Ultrasmall package facilitates miniaturization in end products
   (mounting height 0.7Ὂ).

Part Name(s) : KTX511T
KEC
KEC
Description : EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE

DC/DC CONVERTER APPLICATIONS.

FEATURES
• Composite TYPE with a PNP TRANSISTOR and a SCHOTTKY BARRIER DIODE
   contained in one package facilitating high-density mounting.
• The KTX511T consists of two chips which are equivalent to the
   KTA1532T and the KDR701S, respectively.
• Ultrasmall-sized package permiting applied sets to be made small
   and slim (mounting height 0.7Ὂ).

Part Name(s) : MCH6731
SANYO
SANYO -> Panasonic
Description : PNP EPITAXIAL PLANAR Silicon TRANSISTOR SCHOTTKY BARRIER DIODE

DC / DC Converter Applications

Features
• Composite TYPE with a PNP TRANSISTOR and a SCHOTTKY BARRIER DIODE contained in one package facilitatiing high-density mounting.
• Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm).

Silan
Silan Microelectronics
Description : LOW IR SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION
➤ 2SB183060MA  is  a SCHOTTKY  BARRIER  DIODE  chips fabricated in silicon EPITAXIAL PLANAR technology;
➤ Due to special SCHOTTKY BARRIER structure, the chips have  very  low  reverse  leakage  current  (  typical IR=0.002mA@  Vr=100V  )  and  maximum  150°C operation junction temperature;
➤ Low power losses, high efficiency;
➤ Guard ring construction for transient protection;
➤ High ESD capability;
➤ High surge capability;
➤ Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits;
➤ Chip Size: 1830mm X 1830mm;
➤ Chip Thickness: 280±20mm;

Silan
Silan Microelectronics
Description : LOW IR SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION
➤  2SB183100MA  is  a SCHOTTKY  BARRIER  DIODE  chips fabricated in silicon EPITAXIAL PLANAR technology;
➤  Due to special SCHOTTKY BARRIER structure, the   chips have  very  low  reverse  leakage  current  (  typical IR=0.002mA@  Vr=100V  )  and  maximum  150°C operation junction temperature;
➤  Low power losses, high efficiency;
➤  Guard ring construction for transient protection;
➤  High ESD capability;
➤  High surge capability;
➤  Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits;
➤  Chip Size: 1830mm X 1830mm;
➤ Chip Thickness: 280±20mm;
➤ Have two top side electrode materials for customer to choose, detail refer to ordering specifications.

Description : Medium BARRIER SCHOTTKY Mixer DIODEs

[MicroMetrics, Inc.]

Description
The MicroMetrics MNM 200 series of Medium BARRIER SCHOTTKY DIODEs are metal semiconductor junction devices that have a typical short reverse recovery time. This allows their use at high microwave frequencies when the performance of the n-TYPE may be reduced. The forward I-V of SCHOTTKY DIODEs is determined by the junction metal used. For every different metal selection there is a different forward voltage characteristic or “BARRIER Height”. These devices are best suited for applications through 26 GHz.

Features
• Multi-Junction Chips
• Low 1/F Noise
• Small Junction Capacitance

Applications
  Medium BARRIER SCHOTTKY Mixer DIODEs are ideally suited for use in mixers, doublers and modulators.

Formosa
Formosa Technology
Description : PNP EPITAXIAL PLANAR TRANSISTOR

600mA General Purpose PNP EPITAXIAL PLANAR TRANSISTOR

Features
• High collector-emitterbreakdien voltage.
   (BVCEO = -60V@IC=-10mA)
PNP silicon EPITAXIAL PLANAR TRANSISTOR, is designed for general
   purpose and amplifier applications.
• As complementary TYPE, the NPN TRANSISTOR FMBT2222/
   FMBT2222A is recommended.
• Capable of 225mW power dissipation.
• Lead-free parts for green partner, exceeds environmental
   standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT2907-H.

Description : SCHOTTKY BARRIER RECTIFIERS

[Shanghai Yint Electronic Co., Ltd]

General Description
SCHOTTKY (SCHOTTKY) DIODE is also known as SCHOTTKY BARRIER Rectifiers (SBR),) has been in the power supply industry for 25 years, it is a low-power, ultra-high speed semiconductor devices, widely used in switching power supplies, frequency converters, Driver circuit, such as high frequency, low voltage, high current rectifier DIODE, continuous current DIODE, protection DIODE, or microwave communication circuit as rectifier DIODE, small signal detector DIODE.

FEATURES
● Compact package, easy to install
● Efficient overvoltage protection device
● Ultra-low forward pressure drop
● Ideal products for High Frequency Circuits
● Comply with relevant welding international standard MIL-STD-202

Part Name(s) : RB161L-40
Semtech-Electronics
Semtech Electronics LTD.
Description : SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

FOR HIGH FREQUENCY RECTIFICATION AND SWITCHING POWER SUPPLY

Features
• Compact power mold TYPE
• Ultra low VF
• VRM = 40 V guaranteed

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