datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

P/N + Description + Content Search

Search Word's :
Part Name(s) : FQB6N70
Fairchild Semiconductor
Fairchild Semiconductor
Description : 700V N-Channel MOSFET

700V N-Channel MOSFET

Part Name(s) : P0170AI
Unspecified
Unspecified
Description : N-Channel Enhancement Mode MOSFET

[Wuxi U-NIKC Semiconductor CO.,LTD]

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
   V(BR)DSS 700V
   RDS(ON) 15Ω @VGS = 10V
   ID 1A

Part Name(s) : P0270ATFS
Unspecified
Unspecified
Description : N-Channel Enhancement Mode MOSFET

[Wuxi U-NIKC Semiconductor CO.,LTD]

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
   V(BR)DSS 700V
   RDS(ON) 6.3Ω @VGS = 10V
   ID 2A

Part Name(s) : P0470ED
Unspecified
Unspecified
Description : N-Channel Enhancement Mode MOSFET

[Wuxi U-NIKC Semiconductor CO.,LTD]

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
   V(BR)DSS 700V
   RDS(ON) 2.9Ω @VGS = 10V
   ID 4A

Part Name(s) : P0470ETFS
Unspecified
Unspecified
Description : N-Channel Enhancement Mode MOSFET

[Wuxi U-NIKC Semiconductor CO.,LTD]

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
   V(BR)DSS 700V
   RDS(ON) 2.8mΩ @VGS = 10V
   ID 4A

Part Name(s) : P0470ATF
Unspecified
Unspecified
Description : N-Channel Enhancement Mode MOSFET

[Wuxi U-NIKC Semiconductor CO.,LTD]

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
   V(BR)DSS 700V
   RDS(ON) 2.8Ω @VGS = 10V
   ID 4A

Part Name(s) : FQPF6N70
Fairchild Semiconductor
Fairchild Semiconductor
Description : 700V N-Channel MOSFET

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switch mode power supply.

Features
• 3.5A, 700V, RDS(on) = 1.5 Ω @ VGS = 10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 15 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Part Name(s) : FQPF2N70
Fairchild Semiconductor
Fairchild Semiconductor
Description : 700V N-Channel MOSFET

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 2.0A, 700V, RDS(on) = 6.3Ω @VGS = 10 V
• Low gate charge ( typical 9.0 nC)
• Low Crss ( typical 5.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Part Name(s) : FQP6N70
Fairchild Semiconductor
Fairchild Semiconductor
Description : 700V N-Channel MOSFET

General Description
These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 6.2A, 700V, RDS(on) = 1.5Ω @VGS = 10 V
• Low gate charge (typical 30 nC)
• Low Crss ( typical 15 pF )
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Part Name(s) : FQA6N70
Fairchild Semiconductor
Fairchild Semiconductor
Description : 700V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switch mode power supply.



Features

• 6.4A, 700V, RDS(on) = 1.5 Ω @ VGS = 10 V

• Low gate charge ( typical 30 nC)

• Low Crss ( typical 15 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability



 


12345678910 Next

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]