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Part Name(s) : P0165EL
Wuxi U-NIKC Semiconductor CO.,LTD
Wuxi U-NIKC Semiconductor CO.,LTD
Description : N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
   V(BR)DSS 650V
   RDS(ON) 14Ω @VGS = 10V
   ID 0.3A

Part Name(s) : P0165EI
Wuxi U-NIKC Semiconductor CO.,LTD
Wuxi U-NIKC Semiconductor CO.,LTD
Description : N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
   V(BR)DSS 650V
   RDS(ON) 10.6Ω @VGS = 10V
   ID 1A

Part Name(s) : P0165ED
Wuxi U-NIKC Semiconductor CO.,LTD
Wuxi U-NIKC Semiconductor CO.,LTD
Description : N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
   V(BR)DSS 650V
   RDS(ON) 10.6Ω @VGS = 10V
   ID 1A

Part Name(s) : P0165AI
Unspecified
Unspecified
Description : N-Channel Enhancement Mode MOSFET

[Wuxi U-NIKC Semiconductor CO.,LTD]

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
   V(BR)DSS 650V
   RDS(ON) 14Ω @VGS = 10V
   ID 1A

Part Name(s) : P0465CS
Unspecified
Unspecified
Description : N-Channel Enhancement Mode MOSFET

[Wuxi U-NIKC Semiconductor CO.,LTD]

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
   V(BR)DSS 650V
   RDS(ON) 2.6mΩ @VGS = 10V
   ID 4A

Part Name(s) : FQP7N65C
Fairchild Semiconductor
Fairchild Semiconductor
Description : 650V N-Channel MOSFET (Rev - 2004)

650V N-Channel MOSFET

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features
• 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Part Name(s) : MDF11N65B
Unspecified
Unspecified
Description : N-Channel MOSFET 650V, 12A, 0.65Ω

General Description
These N-Channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.

Features
□ VDS = 650V
□ ID = 12A @ VGS = 10V
□ RDS(ON) ≤ 0.65Ω @ VGS = 10V

Applications
□ Power Supply
□ PFC
□ High Current, High Speed Switching

Part Name(s) : MDF11N65B
MagnaChip Semiconductor
MagnaChip Semiconductor
Description : N-Channel MOSFET 650V, 12A, 0.65Ω

General Description
These N-Channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.

Features
□ VDS = 650V
□ ID = 12A @ VGS = 10V
□ RDS(ON) ≤ 0.65Ω @ VGS = 10V

Applications
□ Power Supply
□ PFC
□ High Current, High Speed Switching

Part Name(s) : TMP12N65H
Wuxi Unigroup Microelectronics Company
Wuxi Unigroup Microelectronics Company
Description : 650V N-Channel MOSFET

FEATURES
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability

APPLICATIONS
● Switch Mode Power Supply (SMPS)
● Uninterruptible Power Supply (UPS)
● Power Factor Correction (PFC)

Part Name(s) : FQP7N65C
Fairchild Semiconductor
Fairchild Semiconductor
Description : 650V N-Channel MOSFET

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features
• 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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