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N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
   V(BR)DSS 650V
   RDS(ON) 14Ω @VGS = 10V
   ID 0.3A

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
   V(BR)DSS 650V
   RDS(ON) 10.6Ω @VGS = 10V
   ID 1A

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
   V(BR)DSS 650V
   RDS(ON) 10.6Ω @VGS = 10V
   ID 1A

[Wuxi U-NIKC Semiconductor CO.,LTD]

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
   V(BR)DSS 650V
   RDS(ON) 14Ω @VGS = 10V
   ID 1A

[Wuxi U-NIKC Semiconductor CO.,LTD]

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
   V(BR)DSS 650V
   RDS(ON) 2.6mΩ @VGS = 10V
   ID 4A

650V N-Channel MOSFET

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features
• 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

General Description
These N-Channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.

Features
□ VDS = 650V
□ ID = 12A @ VGS = 10V
□ RDS(ON) ≤ 0.65Ω @ VGS = 10V

Applications
□ Power Supply
□ PFC
□ High Current, High Speed Switching

General Description
These N-Channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.

Features
□ VDS = 650V
□ ID = 12A @ VGS = 10V
□ RDS(ON) ≤ 0.65Ω @ VGS = 10V

Applications
□ Power Supply
□ PFC
□ High Current, High Speed Switching

FEATURES
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability

APPLICATIONS
● Switch Mode Power Supply (SMPS)
● Uninterruptible Power Supply (UPS)
● Power Factor Correction (PFC)

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features
• 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability