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4TH GENERATION MOSFET

N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

VDSS 600V
ID(cont) 6.5A
RDS(on) 1.30Ω

4TH GENERATION MOSFET

N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

VDSS 600V
ID(cont) 18.0A
RDS(on) 0.40Ω

4TH GENERATION MOSFET

N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

VDSS 600V
ID(cont) 13.0A
RDS(on) 0.60Ω

N-Channel Power MOSFET
600V, 1.5A, 8.1Ω, Single TP/TP-FA

Features
• ON-resistance RDS(on)=6.2Ω(typ.)
• Protection diode in

600V N-Channel MOSFET

Features
□ Low Intrinsic Capacitances
□ Excellent Switching Characteristics
□ Extended Safe Operating Area
□ Unrivalled Gate Charge : 15 nC (Typ.)
□ BVDSS=600V,ID=4A
□ Lower RDS(on) : 2.5Ω (Max) @VG=10V
□ 100% Avalanche Tested

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
   V(BR)DSS 600V
   RDS(ON) 4.3Ω @VGS = 10V
   ID 2A

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
   V(BR)DSS 600V
   RDS(ON) 4.85Ω @VGS = 10V
   ID 2A

N-Channel Enhancement Mode Field Effect Transistor

600V N-Channel Enhancement-Mode MOSFET
VDS= 600V
RDS(ON), Vgs@10V, Ids@1A = 3.8Ω

FEATURES
■ Super high dense cell design for extremely low RDS(ON).
■ High power and current handling capability.
■ Lead free product is acquired.
■ TO-220 full-pak for through hole.
  We declare that the material of product 
  compliance with RoHS requirements

600V N-Channel MOSFET

Features

□ Low Intrinsic Capacitances

□ Excellent Switching Characteristics

□ Extended Safe Operating Area

□ Unrivalled Gate Charge : 8.5 nC (Typ.)

□ BVDSS=600V,ID=2A

□ Lower RDS(on) : 5Ω (Max) @VG=10V

□ 100% Avalanche Tested

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
   V(BR)DSS 600V
   RDS(ON) 4.85Ω @VGS = 10V
   ID 2A