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Part Name(s) : BFC63
Semelab - > TT Electronics plc
Semelab - > TT Electronics plc
Description : 4TH GENERATION MOSFET

4TH GENERATION MOSFET

N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

VDSS 600V
ID(cont) 6.5A
RDS(on) 1.30Ω

Part Name(s) : BFC47
Semelab - > TT Electronics plc
Semelab - > TT Electronics plc
Description : 4TH GENERATION MOSFET

4TH GENERATION MOSFET

N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

VDSS 600V
ID(cont) 18.0A
RDS(on) 0.40Ω

Part Name(s) : BFC48
Semelab - > TT Electronics plc
Semelab - > TT Electronics plc
Description : 4TH GENERATION MOSFET

4TH GENERATION MOSFET

N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

VDSS 600V
ID(cont) 13.0A
RDS(on) 0.60Ω

Part Name(s) : SFT1440
ON Semiconductor
ON Semiconductor
Description : N-Channel Power MOSFET

N-Channel Power MOSFET
600V, 1.5A, 8.1Ω, Single TP/TP-FA

Features
• ON-resistance RDS(on)=6.2Ω(typ.)
• Protection diode in

Part Name(s) : WFU4N60
Wisdom technologies
Wisdom technologies
Description : HIGH VOLTAGE N-Channel MOSFE

600V N-Channel MOSFET

Features
□ Low Intrinsic Capacitances
□ Excellent Switching Characteristics
□ Extended Safe Operating Area
□ Unrivalled Gate Charge : 15 nC (Typ.)
□ BVDSS=600V,ID=4A
□ Lower RDS(on) : 2.5Ω (Max) @VG=10V
□ 100% Avalanche Tested

Part Name(s) : P0260ETF
Wuxi U-NIKC Semiconductor CO.,LTD
Wuxi U-NIKC Semiconductor CO.,LTD
Description : N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
   V(BR)DSS 600V
   RDS(ON) 4.3Ω @VGS = 10V
   ID 2A

Part Name(s) : P0260EIA
Wuxi U-NIKC Semiconductor CO.,LTD
Wuxi U-NIKC Semiconductor CO.,LTD
Description : N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
   V(BR)DSS 600V
   RDS(ON) 4.85Ω @VGS = 10V
   ID 2A

Part Name(s) : L2N600
Leshan Radio Company,Ltd
Leshan Radio Company,Ltd
Description : N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

600V N-Channel Enhancement-Mode MOSFET
VDS= 600V
RDS(ON), Vgs@10V, Ids@1A = 3.8Ω

FEATURES
■ Super high dense cell design for extremely low RDS(ON).
■ High power and current handling capability.
■ Lead free product is acquired.
■ TO-220 full-pak for through hole.
  We declare that the material of product 
  compliance with RoHS requirements

Part Name(s) : WFD2N60
Wisdom technologies
Wisdom technologies
Description : HIGH VOLTAGE N-Channel MOSFET

600V N-Channel MOSFET



Features

□ Low Intrinsic Capacitances

□ Excellent Switching Characteristics

□ Extended Safe Operating Area

□ Unrivalled Gate Charge : 8.5 nC (Typ.)

□ BVDSS=600V,ID=2A

□ Lower RDS(on) : 5Ω (Max) @VG=10V

□ 100% Avalanche Tested



 


Part Name(s) : P0260EDA
Wuxi U-NIKC Semiconductor CO.,LTD
Wuxi U-NIKC Semiconductor CO.,LTD
Description : N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
   V(BR)DSS 600V
   RDS(ON) 4.85Ω @VGS = 10V
   ID 2A

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