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Part Name(s) : MG6304WZ
ROHM Semiconductor
Description : 650V 40A Insulated Gate Bipolar Transistor
Part Name(s) : MG6404WZ
ROHM Semiconductor
Description : 650V 40A Insulated Gate Bipolar Transistor
Part Name(s) : HMG60N60A HMG60N60T
Unspecified
Description : 600V Insulated Gate Bipolar Transistor
Part Name(s) : SGL40N150
Fairchild Semiconductor
Description : Insulated Gate Bipolar Transistor (IGBT)
Part Name(s) : SGL40N150D
Fairchild Semiconductor
Description : Insulated Gate Bipolar Transistor (IGBT)
Part Name(s) : IRG4PC30SPBF
International Rectifier
Description : INSULATED Gate Bipolar Transistor Standard Speed IGBT
Part Name(s) : IRG4BC40UPBF
International Rectifier
Description : INSULATED Gate Bipolar Transistor UltraFast Speed IGBT (Rev - 2004)
Part Name(s) : IRG4BC40UPBF
International Rectifier
Description : INSULATED Gate Bipolar Transistor UltraFast Speed IGBT
Part Name(s) : IRG4PC50FPBF
International Rectifier
Description : Fast Speed IGBT
Part Name(s) : FGL40N150 FGL40N150D FGL40N150DTU GL40N150
Fairchild Semiconductor
Description : Electrical Characteristics of the IGBT
Part Name(s) : GP250MHB06S
Dynex Semiconductor
Description : Half Bridge IGBT Module
Part Name(s) : G4BC30FD1 IRG4BC30FD1
International Rectifier
Description : Fast CoPack IGBT
Part Name(s) : SGF80N60UF
Fairchild Semiconductor
Description : Ultra-Fast IGBT
Part Name(s) : SSM28G45EM
Silicon Standard Corp.
Description : N-CHANNEL INSULATED-Gate Bipolar Transistor
Part Name(s) : SSM25G45EM
Silicon Standard Corp.
Description : N-CHANNEL INSULATED-Gate Bipolar Transistor
Part Name(s) : AP25G45GEM
Advanced Power Electronics Corp
Description : N-CHANNEL INSULATED Gate Bipolar Transistor
Part Name(s) : MGW14N60ED MGW14N60ED/D MGW14N60EDD MGW14N60ED_D
ON Semiconductor
Description : IGBT IN TO–247 14 A @ 90°C 18 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED ON–VOLTAGE
Part Name(s) : AP28G40GEO
Advanced Power Electronics Corp
Description : N-CHANNEL INSULATED Gate Bipolar Transistor