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Alliance Semiconductor
Alliance Semiconductor
Description : 32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
Part Name(s) : TC58256FT
Toshiba
Toshiba
Description : 256-MBIT (32M x 8 Bits) CMOS NAND E2PROM
Part Name(s) : TC58256FTI
Toshiba
Toshiba
Description : TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Description : 1Mx32 5V Flash Module
Description : Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
NEC => Renesas Technology
NEC => Renesas Technology
Description : 1.0-MICRON CMOS GATE ARRAYS
Description : LOW POWER CMOS SRAM 512K X 8 Bits
Part Name(s) : CMOS-4 CMOS-4A
NEC => Renesas Technology
NEC => Renesas Technology
Description : 1.5-Micron CMOS-4 and -4A
Description : LOW POWER CMOS SRAM 128K X 8 Bits
Renesas Electronics
Renesas Electronics
Description : 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY
SANYO -> Panasonic
SANYO -> Panasonic
Description : 128K(16384 words X 8 Bits) SRAM
Description : 1 MEG (131072 words X 8 Bits) SRAM
Part Name(s) : AD9430/PCB-CMOS
Analog Devices
Analog Devices
Description : 12-Bit, 170 MSPS 3.3V A/D Converter
Description : 1 MEG (131072 words x 8 Bits) SRAM
Description : 16 Mbit (1M x16) 1.8V Asynchronous SRAM
Description : 32K×8 CMOS SRAM (Common I/O)
Description : 4 Mbit (512K x8) 3.0V Asynchronous SRAM
Description : 1Mbit (128K x8), 3.0V Asynchronous SRAM
Part Name(s) : TC58256AFT
Toshiba
Toshiba
Description : 256-MBIT (32M x 8 Bits) CMOS NAND E2PROM
Part Name(s) : TC58256AFTI
Toshiba
Toshiba
Description : 256-MBIT (32M X 8 Bits) CMOS NAND E2PROM
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