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Part Name(s) : HMG20N60A
Unspecified
Unspecified
Description : 20A, 600V Insulated Gate Bipolar Transistor
Part Name(s) : HMG60N60A HMG60N60T
Unspecified
Unspecified
Description : 600V Insulated Gate Bipolar Transistor
Part Name(s) : MG6306WZ
ROHM Semiconductor
ROHM Semiconductor
Description : 650V 20A Insulated Gate Bipolar Transistor
Part Name(s) : HMG40N60A
Unspecified
Unspecified
Description : 40A, 600V Insulated Gate Bipolar Transistor
MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
Description : MEDIUM POWER, HIGH FREQUENCY USE Insulated TYPE
Part Name(s) : IRG4PC30SPBF
International Rectifier
International Rectifier
Description : Insulated Gate Bipolar Transistor Standard Speed IGBT
Part Name(s) : IRG4BC40UPBF
International Rectifier
International Rectifier
Description : Insulated Gate Bipolar Transistor UltraFast Speed IGBT (Rev - 2004)
Part Name(s) : IRG4BC40UPBF
International Rectifier
International Rectifier
Description : Insulated Gate Bipolar Transistor UltraFast Speed IGBT
Part Name(s) : IRG4PC50FPBF
International Rectifier
International Rectifier
Description : Fast Speed IGBT
Part Name(s) : SGF40N60UF
Fairchild Semiconductor
Fairchild Semiconductor
Description : Ultra-Fast IGBT
Part Name(s) : GP250MHB06S
Dynex Semiconductor
Dynex Semiconductor
Description : Half Bridge IGBT Module
Part Name(s) : G4BC30FD1 IRG4BC30FD1
International Rectifier
International Rectifier
Description : Fast CoPack IGBT
Part Name(s) : CR20EY
MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
Description : MEDIUM POWER, INVERTER USE NON-Insulated TYPE, GLASS PASSIVATION TYPE
Part Name(s) : SSM28G45EM
Silicon Standard Corp.
Silicon Standard Corp.
Description : N-CHANNEL Insulated-Gate Bipolar Transistor
Part Name(s) : SSM25G45EM
Silicon Standard Corp.
Silicon Standard Corp.
Description : N-CHANNEL Insulated-Gate Bipolar Transistor
Part Name(s) : QM20TD-H
MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
Description : MITSUBISHI Transistor MODULES MEDIUM POWER SWITCHING USE Insulated TYPE
Part Name(s) : AP25G45GEM
Advanced Power Electronics Corp
Advanced Power Electronics Corp
Description : N-CHANNEL Insulated Gate Bipolar Transistor
ON Semiconductor
ON Semiconductor
Description : IGBT IN TO–247 14 A @ 90°C 18 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED ON–VOLTAGE
Part Name(s) : AP28G40GEO
Advanced Power Electronics Corp
Advanced Power Electronics Corp
Description : N-CHANNEL Insulated Gate Bipolar Transistor
Part Name(s) : QM20TD-HB
MITSUBISHI ELECTRIC
MITSUBISHI ELECTRIC
Description : MITSUBISHI Transistor MODULES MEDIUM POWER SWITCHING USE Insulated TYPE
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