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Part Name(s) : 1416-100
GHz Technology
Description : 100 Watts - 50 Volts, Pulsed Radar 1400 - 1600 MHz
Part Name(s) : MRF6V10010NR4
Freescale Semiconductor
Description : RF Power Field Effect Transistor
Part Name(s) : MRF6V10010NR4
NXP Semiconductors.
Description : RF Power Field Effect Transistor
Part Name(s) : 1214-300M
Advanced Power Technology
Description : 300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
Part Name(s) : 1214-300M
Microsemi Corporation
Description : 300 Watts - 40 Volts, 150µs, 10% Radar 1200 - 1400 MHz
Part Name(s) : 1214-300V
Microsemi Corporation
Description : 300 Watts - 50 Volts, 330µs, 10% Radar 1200 - 1400 MHz
Part Name(s) : 1214-300
Advanced Power Technology
Description : 300 Watts - 50 Volts, 100us, 10% Radar 1200 1400 MHz
Part Name(s) : MRF15090
Motorola => Freescale
Description : 90 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON
Part Name(s) : 1214-300
GHz Technology
Description : 300 Watts - 50 Volts, 100µs, 10% Radar 1200 - 1400 MHz
Part Name(s) : HVV1214-025
Advanced Semiconductor
Description : 25 Watts, 50V, 1200-1400MHz 200!s, 10% Duty
Part Name(s) : MRF6V10250HSR3
Freescale Semiconductor
Description : RF Power Field Effect Transistor
Part Name(s) : JTDA50-2 JTDA50
Unspecified
Description : 50 Watts, 36 Volts, 960 - 1215 MHz
Part Name(s) : MRF7S35015HSR3
Freescale Semiconductor
Description : RF Power Field Effect Transistor
Part Name(s) : MRF7S35015HSR3
Freescale Semiconductor
Description : RF Power Field Effect Transistor (Rev - 2008)
Part Name(s) : JTDA50 JTDA50-2
Unspecified
Description : 50 Watts, 36 Volts, 960 - 1215 MHz
Part Name(s) : 100C1032 100C1032-TNC 100C1032-BNC 100C1032-SMA
DAICO Industries
Description : Medium Power PIN Diode SP2T
Part Name(s) : UDR-500
GHz Technology
Description : 500 Watts - 40 Volts, Pulsed Radar 400 - 450 MHz
Part Name(s) : 1617-35
GHz Technology
Description : 35 Watts, 28 Volts, Pulsed Radar 1540 - 1660 MHz
Part Name(s) : GI1-1200 GI1-1400 GI1-1600
General Semiconductor
Description : MINIATURE HIGH VOLTAGE GLASS PASSIVATED RECTIFIER