SPECIFICATIONS
q Infrared CCD Camera (camera head, camera control unit)
Imaging device .............................................. 2/3-inch infrared CCD
Spectral response .........................................400 nm to 1200 nm
No. of pixels .................................................. 380,000
Effective photocathode size ......................... 6.3 × 4.7 mm
Power consumption ..................................... 20 VA
q Video Monitor
CRT ............................................................... 12-inch/Black and white, high-resolution model
Resolution (horizontal center) ...................... 900 TV lines min.
Power consumption ..................................... 38 VA
q Infrared Microscope
Optical path switching .................................. 100 : 0 / 0 : 100 (eyepiece/camera)
Stage travel area .......................................... 153 × 153 mm
Epi-illuminated light source .......................... 12 V, 100 W halogen lamp
Revolver ........................................................ 5 holes
Infrared objectives ........................................ 10 ×, 20 ×, 50 × (optional: 5 ×, 100 × 1)
q Environmental Conditions
Ambient operating temperature range ......... 0 to +40°C
Ambient storage temperature range ............ -10 to +50°C
Ambient operating/storage humidity ............ 90% max. (with no condensation)
Line voltage................................................... 100 VAC ± 10%, 50/60 Hz
COMPONENTS
• Infrared CCD camera
• Camera control unit
• Video monitor
• Infrared microscope (including light source
dimmer transformer*)
• Cables: 1 set
* Specify the line voltage at ordering.
OPTIONS
• C7103 IC Backside Polishing System
IMAGE EXAMPLE
APPLICATIONS
• Inspection of flip-chip and other packaged IC
devices
• Testing for abnormalities (defects, failures) in
metal and polysilicon wiring
• Observation of wire bonding
• Observation of various types of die bonding zones
• Simultaneous inspection of Al-Si nodules and
multiple patterns
• Observation of pattern diffusion into substrate
• Identification of ESD failure locations
• Subject to local technical requirements and regulations, availability of products included in this promotional material may vary.
Please consult with our sales office.
• Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies
or omissions. Specifications and external appearance are subject to change without notice.
© 1999 Hamamatsu Photonics K.K.
ISO 9001/ISO 13485
EN 46001
Certificate: 09 105 79045
Homepage Address http://www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Systems Division
812 Joko-cho, Hamamatsu City, 431-3196, Japan, Telephone: (81)53-431-0124, Fax: (81)53-435-1574, E-mail:export@sys.hpk.co.jp
U.S.A. and Canada: Hamamatsu Photonic Systems: 360 Foothill Road, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1)908-231-1116, Fax: (1)908-231-0852
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)208-367-3560, Fax: (44)208-367-6384
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 Solna, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E 20020 Arese (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741
Cat. No. SSIS 1025E02
JUL/99 CR
Created in Japan (PDF)