STS4DNFS30L(2002) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
View to exact match
STS4DNFS30L
(Rev.:2002)
(Rev.:2002)
STMicroelectronics
STS4DNFS30L Datasheet PDF : 8 Pages
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1E.LECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V, ID = 2 A
RG = 4.7 Ω VGS = 5 V
(see test circuit, Figure 1)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDD = 24 V, ID = 4 A,
VGS = 5 V
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 15 V, ID = 2 A,
RG = 4.7Ω, VGS = 5 V
(see test circuit, Figure 1)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 4 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 4 A, di/dt = 100A/µs,
VDD = 15 V, Tj = 150°C
(see test circuit, Figure 3)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STS4DNFS30L
Min. Typ. Max. Unit
11
ns
100
ns
6.5
9
nC
3.6
nC
2
nC
Min.
Typ.
25
22
Max.
Unit
ns
ns
Min. Typ. Max. Unit
4
A
16
A
1.2
V
35
ns
25
nC
1.4
A
Safe Operating Area
Thermal Impedance
3/8
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