STS4DNFS30L(2002) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

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STS4DNFS30L
(Rev.:2002)

N-CHANNEL 30V - 0.044Ω - 4A SO-8 STripFET™ II MOSFET PLUS SCHOTTKY RECTIFIER

STMicroelectronics 

STS4DNFS30L

THERMAL DATA

Rthj-amb (*)Thermal Resistance Junction-ambient MOSFET

Tstg

Storage Temperature Range

Tl

Junction Temperature

(*) Mounted on FR-4 board (Steady State)

62.5

-55 to 150

-55 to 150

°C/W

°C

°C

MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

30

V

Breakdown Voltage

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

µA

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16 V

±100

nA

ON (1)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS, ID = 250µA

VGS = 10V, ID = 2 A

VGS = 5V, ID = 2 A

Min.

1

Typ. Max.

0.044

0.051

0.055

0.065

Unit

V

Ω

Ω

DYNAMIC

Symbol

gfs (1)

Ciss

Coss

Crss

Parameter

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS = 15 V , ID = 2 A

VDS = 25V, f = 1 MHz, VGS = 0

Min.

Typ.

5

330

90

40

Max.

Unit

S

pF

pF

pF

2/8

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