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STS12NF30L(1999) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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STS12NF30L Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
®
STS12NF30L
N - CHANNEL 30V - 0.0085- 12A SO-8
STripFETPOWER MOSFET
TYPE
V DSS
RDS(on)
ID
STS12NF30L
30 V
< 0.01
12 A
s TYPICAL RDS(on) = 0.0085
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique ” Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s DC MOTOR DRIVE
s DC-DC CONVERTERS
s BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VDS
V DGR
Drain-source Volt age (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
VGS G ate-source Voltage
ID
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
() Pulse width limited by safe operating area
Value
30
30
± 20
12
7 .5
48
2 .5
Un it
V
V
V
A
A
A
W
May 1999
1/8

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