MX1011B200Y View Datasheet(PDF) - Philips Electronics
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Description
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MX1011B200Y Datasheet PDF : 12 Pages
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Philips Semiconductors
Microwave power transistor
Product specification
MX1011B200Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCES
VCEO
VEBO
ICM
Ptot
Tstg
Tj
Tsld
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
peak collector current
total power dissipation
storage temperature
junction temperature
soldering temperature
CONDITIONS
open emitter
RBE = 0
open base
open collector
tp = 10 µs; δ = 1%
Tmb < 75 °C; tp ≤ 10 µs; δ ≤ 1%
t ≤ 10 s; note 1
MIN.
−
−
−
−
−
−
−65
−
−
MAX.
65
65
15
3
11.5
515
+200
200
235
UNIT
V
V
V
V
A
W
°C
°C
°C
Note
1. Up to 0.2 mm from ceramic.
600
handbook, halfpage
P tot
(W)
400
MLC465
200
0
50
0
50
100
150
200
Tmb (oC)
tp = 10 µs; δ = 1%.
Fig.2 Power derating curve.
1997 Feb 18
3
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