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RB551V-30 View Datasheet(PDF) - Jiangsu High diode Semiconductor Co., Ltd

Part Name
Description
View to exact match
RB551V-30
HDSEMI
Jiangsu High diode Semiconductor Co., Ltd HDSEMI
RB551V-30 Datasheet PDF : 4 Pages
1 2 3 4
RB551V -30
SOD323 Plastic-Encapsulate Diodes
Schottky Rectifier
Features
Low current rectifier schottky diode
Low voltage, low inductance
For power supply
Applications
Rectifier
Marking
D
SOD3 23
Parameter S
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Non-repetitive Peak Forward
Surge Current@t=8.3ms
Power dissipation
Thermal resistance junction to ambient
Junction temperature
Storage temperature
ymbol
VRM
VR
IO
IFSM
Pd
RθJA
Tj
Tstg
Limit
30
30
0.5
2
200
500
125
-55~+150
Electrical Characteristics (Ta=25Unless otherwise specified
Parameter
Forward voltage
Reverse current
Symbol Min Typ Max Unit
VF
0.36
0.47
V
IR
100 μA
Unit
V
V
A
A
mW
/W
Conditions
IF=100mA
IF=500mA
VR=20V
High Diode Semiconductor
1

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