BC857BS View Datasheet(PDF) - DC COMPONENTS
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Description
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BC857BS Datasheet PDF : 2 Pages
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DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
BC857BS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Dual PNP Surface Mount Small Signal Transistor
Pinning
1-4 = Emitter
2-5 = Base
3-6 = Collector
C1 B2 E2
E1 B1 C2
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-45
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-200
mA
Total Power Dissipation
Junction Temperature
Storage Temperature
PD
TJ
TSTG
300
mW
+150
oC
-55 to +150 oC
.012(0.3)
.004(0.1)
SOT-363
6
54
.055(1.4) .087(2.2)
.043(1.1) .079(2.0)
1
23
.063(1.6)
.051(1.3)
.028(0.7)
.024(0.6)
.087(2.2)
.071(1.8)
.051(1.3)
.035(0.9)
.008(0.2)
.004(0.1)
.028(0.7)
.012(0.3)
.004
(0.10)
Max
.028(0.7)
.012(0.3)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Collector-Base Breakdown Volatge
BVCBO -50
-
Collector-Emitter Breakdown Voltage BVCEO -45
-
Emitter-Base Breakdown Volatge
BVEBO
-5
-
Collector Cutoff Current
ICBO
-
-
Collector-Emitter Saturation Voltage(1) VCE(sat)1
-
-
VCE(sat)2
-
-
Base-Emitter Saturation Voltage(1)
VBE(sat)1
-
-0.7
VBE(sat)2
-
-0.9
Base-Emitter On Voltage
DC Current Gain(1)
VBE(on)1 -0.6
-
VBE(on)2
-
-
hFE
220
-
Transition Frequency
fT
-
150
Output Capacitance
Cob
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Max
-
-
-
-15
-0.3
-0.65
-
-
-0.75
-0.82
450
-
6
Unit
V
V
V
nA
V
V
V
V
V
V
-
MHz
pF
Test Conditions
IC=-10µA
IC=-1mA
IE=-1µA
VCB=-30V
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
IC=-2mA, VCE=-5V
IC=-10mA, VCE=-5V
IC=-2mA, VCE=-5V
IC=-10mA, VCE=-5V
VCB=-10V, f=1MHz, IE=0
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