ACE3401A View Datasheet(PDF) - ACE Technology Co., LTD.
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ACE3401A Datasheet PDF : 6 Pages
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Electrical Characteristics (TA=25
ACE3401A
P-Channel Enhancement Mode Field Effect Transistor
℃) u n less oth erw ise n o ted
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250μA, VGS=0V
-30
V
IDSS
Zero Gate Voltage Drain Current
VDS=-24V, VGS=0V
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±12V
-1
μA
-5
±100 nA
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250μA
-0.7 -1 -1.3
V
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-25
A
RDS(ON) Static Drain-Source On-Resistance
VGS=-10V, ID=-4.2A
TJ=125°C
VGS=-4.5V, ID=-4A
42 50
mΩ
75
53 65
mΩ
gFS
Forward Transconductance
VGS=-2.5V, ID=-1A
VDS=-5V, ID=-5A
80
7 11
120 mΩ
S
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
-0.75 -1
V
IS
Maximum Body-Diode Continuous Current
-2.2
A
ISM
Pulsed Body-Diode CurrentB
-30
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS=0V,VDS=-15V,
f=1MHz
954
pF
115
pF
77
pF
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
6
Ω
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
9.4
nC
VGS=-4.5V, VDS=-15V,
2
nC
ID=-4A
3
nC
tD(on) Turn-On DelayTime
6.3
μS
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V,
3.2
μS
RL=3.6Ω, RGEN=6Ω
38.2
μS
tf
Turn-Off Fall Time
12
μS
trr
Body Diode Reverse Recovery Time IF=-4A, dI/dt=100A/μS
Qrr
Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/μS
20.2
μS
11.2
nC
Note:
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 μs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 ℃
VER 1.1 2
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