C4881 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

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C4881

Silicon NPN Power Transistor

New Jersey Semiconductor 

Jsiizu ^£.mL-C.onau.ctoi

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, One.

Silicon NPN Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SC4881

DESCRIPTION

• Collector-Emitter Breakdown Voltage-

: V(BR)CEo= 50V(Min)

• High Switching Speed

• Low Collector Saturation Voltage-

: VCE(sat)= 0.4V(Max)@ (|c= 2.5A, IB= 125mA)

APPLICATIONS

• Designed for high current switching applications.

2

•~*'^E3^I

• WWW

123

3

PIN 1.BASE

2 . COLLECTOR

3 . EMITT ER

TO-220F package

B-

- C-

-S-

ABSOLUTE MAXIMUM RATINGS(Ta=25°C)

- - |'

U

F'

I

j

.-', '

A

SYMBOL

PARAMETER

VALUE UNIT

VCBO Collector-Base Voltage

VCEO Collector-Emitter Voltage

VEBO Emitter-Base Voltage

60

V

L '-

50

V

5

V

? ..R-

K

Ic

Collector Current-Continuous

5

A

lew

Collector Current-Pulse

8

A

IB

Base Current-Continuous

1

A

20

PT

W

Total Power Dissipation @Ta-25°C

2.0

Tj

Junction Temperature

Tstg

Storage Temperature

150

•c

-55-150 "C

- N-

mm

DIM WIN

A 14.95

B 10.00

C 4.40

D 0.75

F 3.10

H 3.70

J 0.50

K 13.4

L 1.10

N 5.00

Q 2.70

R 2.20

S 2.65

U 6.40

MAX

15.05

10.10

4.60

0.80

3.30

3.90

0.70

13.6

1.30

5.20

2.90

2.40

2.85

6.60

N.I Semi-Conductorsreserves the right to change test conditions, parameter limits and package dimensions \\ithout

notice. Information furnished by N.I Semi-C'ondnctors is believed to he hoth accurate and reliable at the time of wii

to press. I lo\\c\er. N.I Semi-Conductorsassumes no responsibility for any errors or omissions discovered in itsuse.

N.I Semi-Conductors encourages customers to verily that datasheets are current before placing orders.

Qualify 5emi-Conductors

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