15TQ060 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

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15TQ060

Schottky Barrier Rectifier

Inchange Semiconductor 

Schottky Barrier Rectifier

INCHANGE Semiconductor

15TQ060

FEATURES

·Low Forward Voltage

·High Efficiency

·Low leakage current

·High frequency switching power supply

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Switching power supplies

·Converters

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VRWM

VR

Working Peak Reverse Voltage

DC Blocking Voltage

IF(AV)

Average Rectified Forward Current

60

V

15

A

IFSM

Non-repetitive Peak Surge Current (10ms

sine or 6ms Rect.pulse)

260

A

TJ

Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

1. Cathode

2. Cathode

3. Anode

4.

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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