MMBR5179LT1 View Datasheet(PDF) - Motorola => Freescale
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MMBR5179LT1 Datasheet PDF : 2 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBR5179LT1/D
The RF Line
NPN Silicon
High-Frequency Transistor
Designed for small–signal amplification at frequencies to 500 MHz.
Specifically packaged for use in thick and thin–film circuits using surface mount
components.
• High Gain — Gpe = 15 dB Typ @ f = 200 MHz
• Low Noise — NF = 4.5 dB Typ @ f = 200 MHz
• Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Maximum Junction Temperature
Power Dissipation, Tcase = 75°C (1)
Derate linearly above Tcase = 75°C @
THERMAL CHARACTERISTICS
Characteristic
Storage Temperature
Thermal Resistance Junction to Case
DEVICE MARKING
Symbol
VCEO
VCBO
VEBO
IC
TJmax
PD(max)
Value
15
30
3.0
50
150
0.375
5.00
Unit
Vdc
Vdc
Vdc
mAdc
°C
W
mW/°C
Symbol
Tstg
RθJC
Max
– 55 to +150
200
Unit
°C
°C/W
MMBR5179LT1 = 7H
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 3.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = 0.001 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0)
Collector Cutoff Current (VCB = 15 Vdc, IE = 0)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc)
Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc)
Base–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
Current–Gain — Bandwidth Product
fT
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz)
Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 to 1.0 MHz)
Ccb
50 ohm Noise Figure (IC = 1.5 mAdc, VCE = 6.0 Vdc, RS = 50 Ω,
NF
f = 200 MHz)
Common–Emitter Amplifier Power Gain
Gpe
(VCE = 6.0 Vdc, IC = 5.0 mAdc, f = 200 MHz)
NOTE:
1.Case temperature measured on collector lead immediately adjacent to body of package.
MMBR5179LT1
RF AMPLIFIER
TRANSISTOR
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
(TO–236AA/AB)
Min
Typ
Max
Unit
15
—
—
Vdc
30
—
—
Vdc
3.0
—
—
Vdc
—
—
0.02
µAdc
30
—
250
—
—
—
0.4
Vdc
—
—
1.0
Vdc
—
1,400
—
MHz
—
—
1.0
pF
—
4.5
—
dB
—
15
—
dB
REV 8
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MMBR5179LT1
1
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