CY7C109B-20VI View Datasheet(PDF) - Cypress Semiconductor
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Description
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CY7C109B-20VI Datasheet PDF : 12 Pages
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CY7C109B
CY7C1009B
Switching Characteristics[5] Over the Operating Range (continued)
Parameter
Description
READ CYCLE
tRC
tAA
tOHA
tACE
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE1 LOW to Data Valid, CE2 HIGH to Data
Valid
tDOE
tLZOE
tHZOE
tLZCE
tHZCE
tPU
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z[6, 7]
CE1 LOW to Low Z, CE2 HIGH to Low Z[7]
CE1 HIGH to High Z, CE2 LOW to High Z[6, 7]
CE1 LOW to Power-Up, CE2 HIGH to
Power-Up
tPD
CE1 HIGH to Power-Down, CE2 LOW to
Power-Down
WRITE CYCLE[8]
tWC
Write Cycle Time[9]
tSCE
CE1 LOW to Write End, CE2 HIGH to Write End
tAW
Address Set-Up to Write End
tHA
Address Hold from Write End
tSA
Address Set-Up to Write Start
tPWE
WE Pulse Width
tSD
Data Set-Up to Write End
tHD
tLZWE
tHZWE
Data Hold from Write End
WE HIGH to Low Z[7]
WE LOW to High Z[6, 7]
7C109B-20
7C1009B-20
Min. Max.
20
20
3
20
8
0
8
3
8
0
20
20
15
15
0
0
12
10
0
3
8
7C109B-25
7C1009B-25
Min. Max.
25
25
5
25
10
0
10
5
10
0
25
25
20
20
0
0
15
15
0
5
10
7C109B-35
7C1009B-35
Min. Min.
35
35
5
35
15
0
15
5
15
0
35
35
25
25
0
0
20
20
0
5
15
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Data Retention Characteristics Over the Operating Range (Low Power version only)
Parameter
Description
VDR
ICCDR
tCDR
tR
VCC for Data Retention
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
Conditions
No input may exceed VCC + 0.5V
VCC = VDR = 2.0V,
CE1 > VCC – 0.3V or CE2 < 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V
Min. Max Unit
2.0
V
150 µA
0
ns
200
µs
Document #: 38-05038 Rev. **
Page 5 of 12
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