BCW68G View Datasheet(PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

Part Name

Description

View to exact match

BCW68G

PNP EPITAXIAL SILICON TRANSISTOR

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

BCW68G

PNP EPITAXIAL SILICON TRANSISTOR

WEJ ELECTRONIC CO.,LTD SURFACE MOUNT SMALL

SIGNAL TRANSISTORS

ABSOLUTE MAXIMUM RATINGS at Ta=25

Characteristic

Symbol Rating

Collector-Emitter Voltage

Vceo

-45

Collector-Base Voltage

Vcbo

-60

Collector Current

Ic

-800

Collector Dissipation Ta=25 *

PD

225

Junction Temperature

Tj

150

Storage Temperature

Tstg -65-150

Unit

V

V

mA

mW

1.

2.4

1.3

1.BASE

2.EMITTER

3.COLLECTOR

Unit:mm

ELECTRICAL CHARACTERISTICS at Ta=25

Characteristic

Symbol Min Max Unit

Test Conditions

DC Current Gain

Hfe 120 400

Vce= -1.0V Ic= -10mA

Collector-Emitter Saturation Voltage

Vce(sat)

-1.5 V Ic= -300mA Ib= -30mA

Gain Bandwidth Product

fT

100

MHz Vce= -5V Ic=-10mA

f=50MHz

* Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 .

# Pulse Test: Pulse Width 300uS,Duty cycle 2%

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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