MPS6523RLRM View Datasheet(PDF) - ON Semiconductor
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Description
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MPS6523RLRM Datasheet PDF : 12 Pages
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PNP
MPS6523
NPN MPS6521 PNP MPS6523
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125°C
25°C
200
– 55°C
100
80
60
40
0.003 0.005 0.01
0.02 0.03 0.05 0.07 0.1
VCE = 1.0 V
VCE = 10 V
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 26. DC Current Gain
20 30 50 70 100
1.0
TA = 25°C
0.8
0.6
IC = 1.0 mA 10 mA
50 mA 100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
5.0 10 20
Figure 27. Collector Saturation Region
100
TA = 25°C
PULSE WIDTH = 300 µs
80 DUTY CYCLE ≤ 2.0%
300 µA
60
40
20
350 µA
IB = 400 µA
250 µA
200 µA
150 µA
100 µA
50 µA
0
0 5.0 10 15 20 25 30 35 40
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 28. Collector Characteristics
1.4
TJ = 25°C
1.2
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.1 0.2 0.5 1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 29. “On” Voltages
50 100
1.6
*APPLIES for IC/IB ≤ hFE/2
0.8
*qVC for VCE(sat)
0
25°C to 125°C
– 55°C to 25°C
0.8
1.6
qVB for VBE
25°C to 125°C
– 55°C to 25°C
2.4
0.1
0.2 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
50 100
Figure 30. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
9
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