ZTX758 View Datasheet(PDF) - Diodes Incorporated.
Part Name
Description
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ZTX758 Datasheet PDF : 7 Pages
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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
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Diodes Incorporated
ZTX758
Value
Unit
-400
V
-400
V
-7
V
-0.5
A
-1
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Power Dissipation (Note 6)
Thermal Resistance Junction to Ambient (Note 5)
Thermal Resistance Junction to Ambient (Note 6)
Thermal Resistance Junction to Lead (Note 7)
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
RθJL
TJ, TSTG
Value
1.5
1
116
175
70
-55 to +200
Unit
W
W
°C/W
°C/W
°C/W
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V
3A
V
C
Notes:
5. For a through-hole device mounted at the seating plane (2.5mm lead length) with the collector lead on 25mm x 25mm 1oz copper
that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on minimum recommended pad layout with 12mm lead length from the bottom of package to the board.
7. Thermal resistance from junction to solder-point at the seating plane (2.5mm from the bottom of package along the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZTX758
Document number: DS33299 Rev. 2 - 2
2 of 7
www.diodes.com
August 2013
© Diodes Incorporated
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