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M306V2ME View Datasheet(PDF) - Renesas Electronics

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Description
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M306V2ME Datasheet PDF : 271 Pages
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M306V2ME-XXXFP, M306V2EEFP
1.5 Performance Outline
Table 1.5.1 is a performance outline.
Table 1.5.1 Performance outline
Item
Performance
Number of basic instructions
91 instructions
Shortest instruction execution time
100 ns(f(XIN)=10 MHz)
Memory
ROM
192K bytes
size
RAM
5K bytes
OSD ROM
61K bytes
OSD RAM
2.2K bytes
I/O port
P0 to P10
8 bits 8, 5 bits 2, 4 bits 1
Multifunction TA0, TA1, TA2, TA3, TA4
16 bits 5
timer
TB0, TB1, TB2
16 bits 3
Serial I/O
UART0
1 unit: UART or clock synchronous
UART2
1 unit: UART or clock synchronous
Multi-master I2C-BUS interface 0 1 unit (2 channels)
Multi-master I2C-BUS interface 1 1 unit (1 channel)
A-D converter
8 bits 6 channels
D-A converter
8 bits 2 channels
DMAC
2 channels (trigger: 23 sources)
OSD function
Triple layer, 890 kinds of fonts, 42 character 16 lines
Data slicer
HSYNC counter
Watchdog timer
32-bit buffer
8 bits 2 channels
15 bits 1 (with prescaler)
Interrupt
21 internal and 3 external sources, 4 software sources, 7 levels
Clock generating circuit
3 built-in clock generation circuits
Power source voltage
4.5 V to 5.5V (f(XIN ) = 10 MHz)
Power consumption
250 mW
I/O
I/O withstand voltage
5V
characteristics Output current
5 mA
Memory expansion
Operating ambient temperature
Available
–10 o C to 70 o C
Device configuration
CMOS high performance silicon gate
Package
100-pin plastic molded QFP
Rev.1.40 Oct 06, 2004 page 5 of 269

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