1N4148(1999) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
View to exact match
1N4148 Datasheet PDF : 4 Pages
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Silicon Epitaxial Planar Diodes
Features
D Electrically equivalent diodes: 1N4148 – 1N914
1N4448 – 1N914B
1N4148.1N4448
Vishay Telefunken
Applications
Extreme fast switches
94 9367
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
tp=1ms
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
Junction temperature
VR=0
x l=4mm, TL=45°C
l=4mm, TL 25°C
Storage temperature range
Type
Symbol Value
Unit
VRRM
100
V
VR
75
V
IFSM
2
A
IFRM
500
mA
IF
300
mA
IFAV
150
mA
PV
440
mW
PV
500
mW
Tj
200
°C
Tstg –65...+200 °C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
l=4mm, TL=constant
Symbol
Value
Unit
RthJA
350
K/W
Document Number 85521
Rev. 2, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
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