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C458PD View Datasheet(PDF) - New Jersey Semiconductor

Part Name
Description
View to exact match
C458PD
NJSEMI
New Jersey Semiconductor NJSEMI
C458PD Datasheet PDF : 2 Pages
1 2
[lziiE.ii ^£mL~(Lona.uctoi tJ^toaucti, tine.
Cs
J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
LIMITING CHARACTERISTICS
PARAMETER
TEST
CONDITIONS
LIMIT UNITS
Repetitive peak off-
state & reverse
voltage
VDRM^RR
Off-state &reverse IDRM/IRRM
current
Peak half cycle
ITSM
non-repetitive
surge current
Forfusing
I2t
On-state voltage
V^
Critical rate of
di/dt
rise of on-state
current
T, = -40
to+125"C
T = 125"C
60Hz (8,3ms)
50Hz(10ms)
8.3ms
IT = 4000A
tp = 8.3ms
T = 25°C
60Hz
Tj=125"C
up to volts
1400V
65
ma
16
kA
14.6
1.06
MA2s
2.6
volts
400
A/us
Critical rate of
rise of off-state
voltage
Reverse recovery
charge
dv/dt
QRR
T. = 125"C
500
v/us
.T^ 125°C
VR>-50V
@ 100A/us
400
uC
Circuit commutated tQ
turn-off time
200V/US to 80% VD
Vr= -50 V
35
us
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
C458
MUK mm won* i,»>
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