2SB1587 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

View to exact match

2SB1587

Silicon PNP Darlington Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Darlington Power Transistor

2SB1587

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -150V(Min)

·High DC Current Gain-

: hFE= 5000( Min.) @(IC= -6A, VCE=- 4V)

·Low Collector Saturation Voltage-

: VCE(sat)= -2.5V(Max)@ (IC= -6A, IB= -6mA)

·Complement to Type 2SD2438

APPLICATIONS

·Designed for audio, series regulator and general

purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

-160

V

VCEO

Collector-Emitter Voltage

-150

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-8

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

-1

A

75

W

150

℃

Tstg

Storage Temperature

-55~150 ℃

SPTECH website：www.superic-tech.com

1

Share Link: